X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates

被引：0
|
作者：
Bauer, A. [1 ]
Kräusslich, J. [1 ]
Köcher, B. [1 ]
Goetz, K. [1 ]
Fissel, A. [2 ]
Richter, W. [2 ]
机构：
[1] Institute of Optics and Quantumelectronics, Friedrich Schiller University of Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
[2] Institute of Solid State Physics, Friedrich Schiller University of Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 61卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：179 / 182
相关论文
共 50 条
  • [21] Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates
    A. N. Andreev
    N. Yu. Smirnova
    A. S. Tregubova
    M. P. Shcheglov
    V. E. Chelnokov
    Semiconductors, 1997, 31 : 232 - 236
  • [22] UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
    Benjamin, MC
    Bremser, MD
    Weeks, TW
    King, SW
    Davis, RF
    Nemanich, RJ
    APPLIED SURFACE SCIENCE, 1996, 104 : 455 - 460
  • [23] ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC
    Kim, D. H.
    Kumar, V.
    Chen, G.
    Dabiran, A. M.
    Wowchak, A. M.
    Osinsky, A.
    Adesida, I.
    ELECTRONICS LETTERS, 2007, 43 (02) : 127 - 128
  • [24] A study of thick 3C-SiC epitaxial layers grown on 6H-SIC substrates by sublimation epitaxy in vacuum
    Lebedev, A. A.
    Zelenin, V. V.
    Abramov, P. L.
    Bogdanova, E. V.
    Lebedev, S. P.
    Nel'son, D. K.
    Razbirin, B. S.
    Shcheglov, M. P.
    Tregubova, A. S.
    Suvajarvi, M.
    Yakimova, R.
    SEMICONDUCTORS, 2007, 41 (03) : 263 - 265
  • [25] Defects in (111) 3C-SiC layers grown at different temperatures by VLS and CVD on 6H-SiC substrates
    Marinova, Maya
    Jegenyes, Nikoletta
    Andreadou, Ariadne
    Mantzari, Alkyoni
    Lorenzzi, Jean
    Ferro, Gabriel
    Polychroniadis, Efstathios K.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 95 - +
  • [26] A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
    A. A. Lebedev
    V. V. Zelenin
    P. L. Abramov
    E. V. Bogdanova
    S. P. Lebedev
    D. K. Nel’son
    B. S. Razbirin
    M. P. Shcheglov
    A. S. Tregubova
    M. Suvajarvi
    R. Yakimova
    Semiconductors, 2007, 41 : 263 - 265
  • [27] GAN GROWN ON HYDROGEN PLASMA CLEANED 6H-SIC SUBSTRATES
    LIN, ME
    STRITE, S
    AGARWAL, A
    SALVADOR, A
    ZHOU, GL
    TERAGUCHI, N
    ROCKETT, A
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1993, 62 (07) : 702 - 704
  • [28] Growth and investigation of epitaxial 6H-SiC layers obtained by CVD on Lely-grown substrates
    Zelenin, VV
    Lebedev, AA
    Starobinets, SM
    Chelnokov, VE
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 300 - 303
  • [29] Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy
    Shiojima, Kenji
    Mishina, Naoki
    Ichikawa, Naoto
    Kato, Masashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [30] Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers
    Einfeldt, S
    Reitmeier, ZJ
    Davis, RF
    JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 129 - 141
12345