A Nonlinear Circuit Simulation Model for GaAs and InP Heterojunction Bipolar Transistors

被引：0
|
作者：
机构：
来源：
| 1600年 / Horizon House卷 / 46期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [41] InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer
    Kim, YM
    Dahlstrom, M
    Lee, S
    Rodwell, MJW
    Gossard, AC
    SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1541 - 1544
  • [42] InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer
    Kim, YM
    Dahlstrom, M
    Lee, S
    Rodwell, MJW
    Gossard, AC
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 638 - 639
  • [43] Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors
    Tao, N. G. M.
    Liu, H. G.
    Bolognesi, C. R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1675 - +
  • [44] Improved nonlinear electrothermal simulation of bipolar transistors: Application to InP/InGaAs DHBTs
    Scognamillo, Ciro
    Catalano, Antonio Pio
    Della Ragione, Giuseppe
    Muller, Markus
    Schroter, Michael
    Codecasa, Lorenzo
    d'Alessandro, Vincenzo
    2023 29TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS, THERMINIC, 2023,
  • [45] Development of metamorphic InP/InGaAs double heterojunction bipolar transistors (HBTs) on GaAs substrate for microwave applications
    Wang, H
    Radhaknishnan, K
    Li, XP
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 2273 - 2276
  • [46] On the emitter resistance of high-performance GaAs- and InP-Based heterojunction bipolar transistors
    Matsuoka, Yutaka
    Ohkubo, Yukio
    Matsumoto, Taisuke
    Koji, Takashi
    Amano, Yoshiaki
    Takagi, Akio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (06) : 4441 - 4447
  • [47] Thermal properties of metamorphic buffer materials for growth of InP double heterojunction bipolar transistors on GaAs substrates
    Kim, YM
    Dahlstrom, M
    Rodwell, MJW
    Gossard, AC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (05) : 1411 - 1413
  • [48] Low-frequency noise characterization of metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate
    Yang, H
    Wang, H
    Radhakrishnan, K
    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 142 - 144
  • [49] ALGAAS/GAAS SINGLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
    AGARWALA, S
    WON, T
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1151 - 1153
  • [50] On the emitter resistance of high-performance gaas- and inp-based heterojunction bipolar transistors
    Matsuoka, Yutaka
    Ohkubo, Yukio
    Matsumoto, Taisuke
    Koji, Takashi
    Amano, Yoshiaki
    Takagi, Akio
    Japanese Journal of Applied Physics, 2008, 47 (6 PART 1): : 4441 - 4447
12345