SEMICUSTOM LSI.

被引：0
|
作者：
Kuramitsu, Yoichi [1 ]
Ueda, Masahiro [1 ]
机构：
[1] Mitsubishi Electric Corp, LSI Development Lab, Jpn, Mitsubishi Electric Corp, LSI Development Lab, Jpn
来源：
Mitsubishi Electric Advance | 1985年 / 33卷
关键词：
DATA STORAGE; SEMICONDUCTOR - Storage Devices;
D O I：
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中图分类号：
学科分类号：
摘要：
While the market for dynamic memory devices such as the 256Kb dynamic RAM has been growing at 20% annually, the market for application-specific ICs (custom LSIs) has been booming at 30% to 50%. This outstanding growth reflects the maturation of the technology. Custom LSI technology, originally intended for small-batch production in research and development, can now be used to produce special-purpose LSIs in large quantities to meet a diverse variety of user needs. The development of a Gate Array with Internal ROM and of a Gate Array with RAM and ROM is reported.
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页码：4 / 5
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