INFLUENCE OF UNIAXIAL DEFORMATION ON THE POLARIZATION OF THE LUMINESCENCE EMITTED AS A RESULT OF DIAGONAL TUNNELING ACROSS GaAs p-n JUNCTIONS.

被引：0

作者：

Garbuzov, D.Z.

Kop'ev, P.S.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 7卷 / 07期

关键词：

LIGHT - Polarization - LUMINESCENCE - Solids - SEMICONDUCTING GALLIUM COMPOUNDS - Optical Properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Study of uniaxial deformation effect on the degree of luminescence polarization generated by diagonal tunneling across GaAs p-n junctions subjected to pressures either perpendicular or parallel to the electric field is discussed.

引用

页码：963 / 964

共 25 条

[1] INFLUENCE OF UNIAXIAL DEFORMATION ON POLARIZATION OF LUMINESCENCE EMITTED AS A RESULT OF DIAGONAL TUNNELING ACROSS GAAS P-N-JUNCTIONS
GARBUZOV, DZ
KOPEV, PS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 963 - 964
[2] DIAGONAL TUNNELING AND POLARIZATION OF RADIATION IN ALXGA1-XAS-GAAS HETEROJUNCTIONS AND IN GAAS P-N JUNCTIONS
ALFEROV, ZI
GARBUZOV, DZ
MOROZOV, EP
PORTNOI, EL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 885 - &
[3] POLARIZATION OF RECOMBINATION RADIATION EMITTED BY HEAVILY DOPED P-N JUNCTIONS IN GAAS
LOMAKO, VM
NOVOSELO.AM
TKACHEV, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1563 - &
[4] THEORY OF ELECTRON TUNNELING IN SEMICONDUCTORS (DIRECT TUNNELING ACROSS P-N JUNCTIONS)
TAKEUTI, Y
FUNADA, H
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (10) : 1854 - &
[5] CARRIER TRANSPORT ACROSS ELECTROLUMINESCENT P-N JUNCTIONS IN GAAS
PANKOVE, JI
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1890 - &
[6] INFLUENCE OF DEFORMATION ON PROPERTIES OF SILICON P-N JUNCTIONS
POLYAKOV.AL
SHKLOVSK.VV
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 163 - +
[7] CAPACITANCE-RELAXATION DETERMINATION OF IMPURITY ATOM PARAMETERS IN GaAs p-n JUNCTIONS.
Gol'dberg, Yu.A.
Sedov, V.E.
1973, 6 (07): : 1206 - 1208
[8] INFLUENCE OF TRAPPING LEVELS ON THE BISTABLE STATE OF MICROPLASMAS IN GERMANIUM p-n JUNCTIONS.
Palei, V.M.
Vikulin, I.M.
Savchenko, N.M.
1973, 6 (07): : 1174 - 1177
[9] INFLUENCE OF CRYSTALLOGRAPHIC AND ELECTROPHYSICAL IMPERFECTIONS IN MONOCRYSTALLINE SILICON ON THE FORMATION OF MICROPLASMAS IN p-n JUNCTIONS.
Magden, I.N.
Kalnev, N.A.
Electron Technology (Warsaw), 1975, 8 (3-4): : 33 - 43
[10] The effect of damaging radiation (p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions
V. M. Andreev
V. V. Evstropov
V. S. Kalinovskiĭ
V. M. Lantratov
V. P. Khvostikov
Semiconductors, 2007, 41 : 732 - 736

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