Link between hot electrons and interface damage in n-MOSFETs: A Monte Carlo analysis

被引：0
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作者：
Ravaioli, U. [1 ]
Balasubramanian, M. [1 ]
Aktas, O. [1 ]
机构：
[1] Dept. of Elec. and Comput. Engin., Beckman Inst., Univ. Illinois U., Urbana, IL 61801, United States
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：542 / 545
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