共 50 条
- [21] Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor depositionJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (03) : 1045 - 1050Henley, WBSacks, GJ
- [22] Electrical properties of plasma-enhanced chemical vapor deposited germanium selenide filmsJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (04): : 1785 - 1791Qamhieh, NAdriaenssens, GJ
- [23] The growth characteristics of microcrystalline Si thin film deposited by atmospheric pressure plasma-enhanced chemical vapor depositionElectronic Materials Letters, 2013, 9 : 875 - 878Jung-Dae Kwon
- [25] Electrical properties of hafnium oxide gate dielectric deposited plasma enhanced chemical vapor depositionINTEGRATED FERROELECTRICS, 2001, 38 (1-4) : 835 - 843Choi, KJShin, WCPark, JBYoon, SG
- [26] Thin cobalt oxide films for catalysis deposited by plasma-enhanced metal-organic chemical vapor depositionTHIN SOLID FILMS, 2007, 515 (16) : 6590 - 6595Tyczkowski, J.Kapica, R.Lojewska, J.
- [27] THE EFFECTS OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF PLASMA-ENHANCED CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDETHIN SOLID FILMS, 1990, 186 (01) : 73 - 85BROWN, WDKHALIQ, MA
- [28] Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition 1600, American Institute of Physics Inc. (97):
- [29] Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositionJOURNAL OF APPLIED PHYSICS, 2005, 97 (01)Chen, XYLu, YFTang, LJWu, YHCho, BJXu, XJDong, JRSong, WD
- [30] Electrical characteristics of plasma-enhanced chemical vapor deposited silicon carbide thin filmsSILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 451 - 454Pham, HTMAkkaya, Tde Boer, CRSarro, PM
