Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

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Max-Planck Inst fur Metallforschung, Inst fur Physik, Stuttgart, Germany [1 ]
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J Cryst Growth | / 1-2卷 / 28-36期
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Annealing - Crystal defects - Dislocations (crystals) - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconducting silicon - Thermal cycling - Transmission electron microscopy;
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