FLUCTUATION-INDUCED GAP STATES IN AMORPHOUS HYDROGENATED SILICON.

被引：0

作者：

Chakraverty, B.K. ^{[1
]}

机构：

[1] Lab d'Etudes des Proprietes, Electroniques des Solides, Grenoble,, Fr, Lab d'Etudes des Proprietes Electroniques des Solides, Grenoble, Fr

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 53卷 / 02期

关键词：

HYDROGEN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It is shown that in amorphous hydrogenated silicon, self-trapped localized electronic stages can occur in the bandgap due to intense local fluctuation of the hydrogen concentration. The trapping is determined by the mean hydrogen concentration of the system and by the strength of the electron interaction with the fluctuation potential. The fluctuation-induced gap states (FIGS) could be deep enough to trap one or two electrons, are metastable and are probably the cause of the Staebler-Wronski effect and numerous other light-induced effects observed in amorphous hydrogenated silicon.

引用

页码：147 / 157

共 50 条

[31] CHARGE REDISTRIBUTION PROCESS ON GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
FARMER, JW
SU, Z
PHYSICAL REVIEW LETTERS, 1993, 71 (18) : 2979 - 2982
[32] ELECTRON RELAXATION PROPERTIES AND TRANSIENT SPECTROSCOPY OF HYDROGENATED AMORPHOUS SILICON.
Han, R.Q.
Tua, P.F.
Ruvalds, J.
Ngai, K.L.
1600, (26):
[33] PRELIMINARY STUDY ON THE ELECTRONIC STRUCTURE OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON.
Jiang Ping
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 133 - 141
[34] FREQUENCY DISPERSION IN THE CAPACITANCE OF A SCHOTTKY BARRIER ON AMORPHOUS HYDROGENATED SILICON.
Prudnikov, R.V.
Gus'kov, A.P.
Abramov, V.O.
Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizik, 1984, 39 (06): : 69 - 72
[35] ENERGY-DISTRIBUTION OF LIGHT-INDUCED GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ALLOYS
GUHA, S
HUANG, CY
HUDGENS, SJ
PHYSICAL REVIEW B, 1984, 29 (10): : 5995 - 5998
[36] Boron-induced electronic states in hydrogenated amorphous silicon
Lin, SY
THIN SOLID FILMS, 1999, 343 : 285 - 287
[37] Boron-induced electronic states in hydrogenated amorphous silicon
Lin, Shu-Ya
Thin Solid Films, 1999, 343 : 285 - 287
[38] CHARGE REDISTRIBUTION PROCESS ON GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - REPLY
FARMER, JW
SU, Z
PHYSICAL REVIEW LETTERS, 1994, 73 (02) : 367 - 367
[39] CHARGE REDISTRIBUTION PROCESS ON GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - COMMENT
COHEN, JD
LEEN, TM
PHYSICAL REVIEW LETTERS, 1994, 73 (02) : 366 - 366
[40] GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - A COMPARISON OF PHOTOEMISSION AND PHOTOCONDUCTIVITY RESULTS
VONROEDERN, B
MODDEL, G
SOLID STATE COMMUNICATIONS, 1980, 35 (06) : 467 - 471

← 1 2 3 4 5 →