Magneto-transport properties for accumulated layer on surface of Hg1-xCdxTe detector

被引：0
|
作者：
Gui, Yongsheng [1 ]
Zheng, Guozhen [1 ]
Chu, Junhao [1 ]
Guo, Shaoling [1 ]
Tang, Dingyuan [1 ]
Cai, Yi [1 ]
机构：
[1] Shanghai Inst of Technical Physics, the Chinese Acad of Sciences, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1997年 / 18卷 / 09期
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D O I：
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学科分类号：
摘要：
14
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页码：667 / 673
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