Analysis of hot-carrier-induced degradation mode on pMOSFET's

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机构：
[1] Matsuoka, Fumitomo
[2] Iwai, Hiroshi
[3] Hayashida, Hiroyuki
[4] Hama, Kaoru
[5] Toyoshima, Yoshiaki
[6] Maeguchi, Kenji
来源：
Matsuoka, Fumitomo | 1600年 / 37期
关键词：
Deep-Gate Bias - Hot-Carrier-Induced Degradation - PMOSFET - Polysilicon Gate - Shallow Gate Bias - Trapped Holes;
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