ON THE THERMAL DONORS IN SILICON.

被引:11
|
作者
Corbett, James W. [1 ]
Frisch, Harry L. [1 ]
Snyder, Lawrence C. [1 ]
机构
[1] State Univ of New York at Albany,, Physics Dep, Albany, NY, USA, State Univ of New York at Albany, Physics Dep, Albany, NY, USA
关键词
* Supported in part by the Office of Naval Research Contract N00014-75-C-0919; and the Army Office of Research;
D O I
10.1016/0167-577X(84)90025-9
中图分类号
学科分类号
摘要
15
引用
收藏
页码:209 / 210
相关论文
共 50 条
  • [21] Thermal double donors in silicon
    Wagner, P.
    Hage, J.
    Applied Physics A: Solids and Surfaces, 1989, 49 (02): : 123 - 138
  • [22] THERMAL DOUBLE DONORS IN SILICON
    WAGNER, P
    HAGE, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (02): : 123 - 138
  • [23] The measurement of silicon.
    Duval, C
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1944, 218 : 198 - 199
  • [24] AMORPHOUS SILICON.
    Morigaki, K.
    Nitta, S.
    1987, : 53 - 96
  • [25] GaAs ON SILICON.
    Singer, Peter H.
    Semiconductor International, 1987, 10 (05) : 71 - 75
  • [26] PASSIVATION IN SILICON.
    Corbett, J.W.
    Lindstrom, J.L.
    Pearton, S.J.
    Tavendale, A.J.
    Solar Cells, 1987, 24 (1-2): : 127 - 133
  • [27] SENSORS IN SILICON.
    Allan, Roger
    High Technology (Boston), 1984, 4 (09): : 43 - 50
  • [28] Thermal donors in silicon doped with erbium
    Emtsev, VV
    Sobolev, NA
    Andreev, BA
    Poloskin, DS
    Shek, EI
    SOLID STATE PHENOMENA, 1997, 57-8 : 207 - 211
  • [29] Annihilation of thermal double donors in silicon
    Kamiura, Y
    Takeuchi, Y
    Yamashita, Y
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1681 - 1689
  • [30] Structures of thermal double donors in silicon
    Pesola, M
    Lee, YJ
    von Boehm, J
    Kaukonen, M
    Nieminen, RM
    PHYSICAL REVIEW LETTERS, 2000, 84 (23) : 5343 - 5346