BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES.

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作者：
Lowney, Jeremiah R. [1 ]
机构：
[1] NBS, Gaithersburg, MD, USA, NBS, Gaithersburg, MD, USA
来源：
Solid-State Electronics | 1984年 / 28卷 / 1-2期
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10
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页码：187 / 191
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