Chapter 5 SiC for Applications in High-Power Electronics

被引：0
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作者：
Brandt, C.D. [1 ]
Clarke, R.C. [1 ]
Siergiej, R.R. [1 ]
Casady, J.B. [1 ]
Sriram, S. [1 ]
Agarwal, A.K. [1 ]
Morse, A.W. [2 ]
机构：
[1] Northrop Grumman Science and Technology Center Pittsburgh, PA, United States
[2] Northrop Grumman Electronic Sensors and Systems Division Baltimore, MD, United States
来源：
Semiconductors and Semimetals | 1998年 / 52卷 / 0C期
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页码：195 / 236
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