共 50 条
- [21] Bound states in the continuum in a single-level Fano-Anderson modelEUROPEAN PHYSICAL JOURNAL B, 2007, 57 (01): : 45 - 51Longhi, S.
- [22] DOUBLE INJECTION INTO STRUCTURES WITH A LOW-CONDUCTIVITY REGION .2. CURRENT-VOLTAGE CHARACTERISTICS OF A SINGLE-LEVEL SEMICONDUCTORPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 623 - 628PINCEVICIUS, ASAKALAS, AVISCAKAS, J
- [23] PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1822 - 1826CHAZALVIEL, JN
- [24] Majorana fermions manifested as interface states in semiconductor hybrid structuresPHYSICAL REVIEW B, 2010, 82 (08):Linder, JacobSudbo, Asle
- [25] Surface and interface of GaAs/Sl-GaAs structures investigated by photoreflectance spectroscopyVACUUM, 1997, 48 (3-4) : 277 - 282Jezierski, KSitarek, PMisiewicz, JPanek, MSciana, BKorbutowicz, RTlaczala, M
- [26] Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy Bury, P., 1600, American Institute of Physics Inc. (116):
- [27] Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopyJOURNAL OF APPLIED PHYSICS, 2014, 116 (14)Bury, P.Bellan, I.Kobayashi, H.Takahashi, M.Matsumoto, T.
- [28] MEASUREMENT OF SEMICONDUCTOR-INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 760 - 760JOHNSON, NM
- [29] Investigation of interfacial states in MIS structures by a single-frequency admittance methodTechnical Physics, 1997, 42 : 1162 - 1165E. N. BormontovS. V. Lukin
- [30] Investigation of interfacial states in MIS structures by a single-frequency admittance methodTECHNICAL PHYSICS, 1997, 42 (10) : 1162 - 1165Bormontov, ENLukin, SV
