Fabrication of epitaxial diamond thin film on iridium

被引:0
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作者
Ohtsuka, Kazuki [1 ]
Fukuda, Hideo [1 ]
Suzuki, Kazuhiro [1 ]
Sawabe, Atsuhito [1 ]
机构
[1] Aoyamna-Gakuin Univ, Tokyo, Japan
来源
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 9 A-B期
关键词
Atomic force microscopy - Chemical vapor deposition - Crystal orientation - Electric currents - Epitaxial growth - Interfaces (materials) - Ion bombardment - Iridium - Plasma applications - Raman spectroscopy - Surface roughness - Thin films;
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摘要
We have successfully grown smooth diamond thin films epitaxially on (001) iridium surfaces through a direct-current plasma chemical vapor deposition process with two steps: ion irradiation pretreatment and diamond growth. The epitaxial areas of diamond thin films with a mean thickness of about 1.5 μm seem to act as optical mirrors. The average roughness (Ra) of the thin film, as measured by atomic force microscopy, is about 1 nm. Confocal Raman spectroscopy was used to investigate the depth profile of the thin film. Raman bands due to nondiamond carbon components were nominal at the diamond/iridium interface or at other depths.
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