RF modeling issues of deep-submicron MOSFETs for circuit design

被引：0
|
作者：
Cheng, Yuhua [1 ]
Schroter, Michael [1 ]
Enz, Christian [1 ]
Matloubian, Mishel [1 ]
Pehlke, David [1 ]
机构：
[1] Rockwell Semiconductor Systems, Newport Beach, United States
来源：
International Conference on Solid-State and Integrated Circuit Technology Proceedings | 1998年
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D O I：
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摘要：
12
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页码：416 / 419
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