Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN

被引：0

作者：

Seitz, R. ^{[1
]}

Gaspar, C. ^{[1
]}

Monteiro, T. ^{[1
]}

Pereira, E. ^{[1
]}

Leroux, M. ^{[1
]}

Beaumont, B. ^{[1
]}

Gibart, P. ^{[1
]}

机构：

[1] Universidade de Aveiro, Aveiro, Portugal

来源：

Journal of Crystal Growth | / 189-190卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：546 / 550

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