TEN-SECOND ANNEALING OF IMPLANTED SILICON BY LOW-ENERGY ELECTRONS.

被引：0
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作者：
Borisenko, V.E. [1 ]
Zarovskii, D.I. [1 ]
机构：
[1] Radio Engineering Inst, Minsk, USSR, Radio Engineering Inst, Minsk, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 10期
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摘要：
9
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页码：1192 / 1194
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