LIGHT ACTIVATED AUXILIARY THYRISTORS.

被引：0

|

作者：

Silber, D.

Fuellmann, M.

Winter, W.

机构：

来源：

| 1978年

关键词：

Engineering Village;

D O I：

Int Electron Devices Meet (IEDM), 24th, Tech Dig

中图分类号：

学科分类号：

摘要：

OPTICAL TRIGGERING

引用

收藏

页码：575 / 578

相关论文

共 50 条

[41] Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate
A. S. Kyuregyan
S. N. Yurkov
Semiconductors, 1998, 32 : 225 - 229
[42] Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate
Kyuregyan, AS
Yurkov, SN
SEMICONDUCTORS, 1998, 32 (02) : 225 - 229
[43] GATE-ASSISTED TURN-OFF EFFECT IN TIL-TYPE THYRISTORS.
Silard, Andrei
Turtudau, F.
Margarit, M.
Luca, M.
Electron device letters, 1985, EDL-6 (11): : 602 - 603
[44] Circuitry and Technological Methods for Improving the Technical Characteristics of Power Thyristors. Part II. Field-Effect Thyristors with External Control
Voronin, I.P.
Voronin, P.A.
Russian Electrical Engineering, 2024, 95 (07) : 559 - 563
[45] ENERGY CHARACTERISTICS OF PHASE-STEP ALTERNATING-CURRENT CONTROLLERS WITH ONE GROUP OF THYRISTORS.
Rozhanskii, Z.E.
Soviet electrical engineering, 1978, 49 (08): : 70 - 76
[46] COMPARISON OF THE PARAMETERS OF GOLD- AND PLATINUM-DOPED HIGH-POWER DIODES AND THYRISTORS.
Asina, S.S.
Dumanevich, A.N.
Rukhamkin, V.M.
Kuz'min, V.L.
Radio engineering & electronic physics, 1979, 24 (05): : 113 - 117
[47] Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate
Kyuregyan, AS
SEMICONDUCTORS, 1998, 32 (04) : 446 - 451
[48] INVERTER-MODE OPERATION OF A THREE-PHASE BRIDGE CONVERTER WITH SYMMETRIC TRIODE THYRISTORS.
KIRIENKO, V.P.
1981, V 52 (N 3): : 20 - 25
[49] Current distribution in paralleled thyristors. A comparative analysis of 5 real cases in high current transformer - Rectifiers
Fuentes, R
CONFERENCE RECORD OF THE 2004 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4: COVERING THEORY TO PRACTICE, 2004, : 469 - 476
[50] Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate
A. S. Kyuregyan
Semiconductors, 1998, 32 : 446 - 451

← 1 2 3 4 5 →