Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

被引：0
|
作者：
Monroy, E. [1 ]
Hermann, M. [2 ]
Sarigiannidou, E. [1 ]
Andreev, T. [1 ]
Holliger, P. [3 ]
Monnoye, S. [4 ]
Mank, H. [4 ]
Daudin, B. [1 ]
Eickhoff, M. [2 ]
机构：
[1] Equipe Mixte CEA-CNRS-UJF N.S., DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
[2] Walter Schottky Institute, Technical University Munich, Am Coulombwall 3, D-85748 Garching, Germany
[3] DRT/LETI/DTS, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
[4] Novasic, Savoie Technolac, l'Arche no4, 73375 Le Bourget du Lac, France
来源：
Journal of Applied Physics | 2004年 / 96卷 / 07期
关键词：
Activation energy - Doping (additives) - High energy electron diffraction - Monolayers - Optoelectronic devices - Photoluminescence - Structural analysis - Substrates - Transmission electron microscopy - X ray diffraction analysis - Zinc;
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摘要：
The polytype conversion of a GaN film from N-face wurtzite to zinc-blende was investigated. The optical characteristics of GaN:Mg layers are very sensitive to the presence of the cubic polytype. Structural analysis by high-resolution transmission electron microscopy and high-resolution x-ray diffraction measurement revealed alignment of the cubic phase with the [111] axis perpendicular to the substrate surface. A cubic-related donor-acceptor transition at ∼3.16 eV is also observed, together with a broad blue band around 2.9 eV.
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页码：3709 / 3715
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