Spontaneous polysilicon and epitaxial silicon deposition

被引：0

作者：

Mieno, Fumitake ^{[1
]}

Tukune, Atsuhito ^{[1
]}

Miyata, Hiroshi ^{[1
]}

Shimizu, Atsuo ^{[1
]}

Furumura, Yuji ^{[1
]}

机构：

[1] Fujitsu Ltd, Iwate, Japan

来源：

Journal of the Electrochemical Society | 1995年 / 142卷 / 05期

关键词：

Boundary layers - Electric heating - Epitaxial growth - Low temperature phenomena - Oxidation - Pressure effects - Reactive ion etching - Scanning electron microscopy - Semiconducting silicon compounds - Semiconductor device manufacture - Silicon wafers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A spontaneous polysilicon and epitaxial silicon deposition (SPED) process for fabricating high performance submicron devices was developed using Si2H6 as a silicon source gas under low pressure and temperature. SPED was achieved at 8000 Pa and 830°C, even for a 0.2 μm thick film on a substrate with a 0.5 μm SiO2 step. The defect density of the epilayer was less than 0.3/cm2. This SPED layer did not have facets at the transition region.

引用

页码：1590 / 1594

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