SixGe1-x single crystals grown by the RF-heated float zone technique

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Inst fuer Kristallzuechtung, Berlin, Germany [1 ]
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J Cryst Growth | / 3卷 / 243-248期
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For technicaal nd analyticasl upportt he authors are indebtedto A. Gerhardtfo r IR-Fourier-analysis; to D. Klinger for the epd-determinatiaonnd to V. Alex for the X-ray topographsT.h is work was sup-portedb y the GermanB undesministfeiirr Forschung und Technologieu nderthe projectm anagemenotf the GermanS paceA gency( DARA 50 WM 9221);
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