SixGe1-x single crystals grown by the RF-heated float zone technique

被引：0

作者：

Inst fuer Kristallzuechtung, Berlin, Germany ^{[1
]}

机构：

来源：

J Cryst Growth | / 3卷 / 243-248期

关键词：

For technicaal nd analyticasl upportt he authors are indebtedto A. Gerhardtfo r IR-Fourier-analysis; to D. Klinger for the epd-determinatiaonnd to V. Alex for the X-ray topographsT.h is work was sup-portedb y the GermanB undesministfeiirr Forschung und Technologieu nderthe projectm anagemenotf the GermanS paceA gency( DARA 50 WM 9221);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] SixGe1-x single crystals grown by the RF-heated float zone technique
Wollweber, J
Schulz, D
Schroder, W
JOURNAL OF CRYSTAL GROWTH, 1996, 163 (03) : 243 - 248
[2] Extremely reduced dislocation density in SixGe1-x single crystals grown by the float zone technique
Wollweber, J
Schulz, D
Schroder, W
JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) : 166 - 168
[3] Axial temperature distribution in silicon-germanium grown by the RF-heated float zone technique
Schulz, D
Wollweber, J
Darowski, N
Schroder, W
CRYSTAL RESEARCH AND TECHNOLOGY, 1997, 32 (01) : 61 - 68
[4] DISTRIBUTION OF GE IN SINGLE-CRYSTALS OF SIXGE1-X GROWN BY ZONE-REFINING WITHOUT A CRUCIBLE
SAIDOV, MS
RYSAEVA, VA
UMEROV, RS
INORGANIC MATERIALS, 1977, 13 (03) : 425 - 426
[5] Optical properties of SixGe1-x single crystals grown by liquid phase diffusion
Derin, Hueseyin
Kantarli, Kayhan
Yildiz, Mehmet
Dost, Sadik
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 12 (4-5) : 146 - 150
[6] CZOCHRALSKI GROWTH OF SIXGE1-X SINGLE-CRYSTALS
KURTEN, M
SCHILZ, J
JOURNAL OF CRYSTAL GROWTH, 1994, 139 (1-2) : 1 - 5
[7] PHOTOLUMINESCENCE OF MBE GROWN SIXGE1-X FILMS
HOUGHTON, DC
ROWELL, NL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C543 - C543
[8] Surface segregation in pseudomorphic SixGe1-x crystals
Vasev, AV
Chikichev, IS
Chikichev, SI
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 459 - 462
[9] Phase diagram for pseudomorphic SixGe1-x crystals
Chikichev, IS
Vasev, AV
Chikichev, SI
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 455 - 458
[10] Analysis of micro segregation in RF-heated float zone growth of silicon-comparison to the radiation-heated process
Dold, P
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (01) : 1 - 10

← 1 2 3 4 5 →