Quality of selective silicon epitaxial films deposited using disilane and chlorine

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Dept. of Elec. and Comp. Engineering, Raleigh, NC 27695, United States ^{[1
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J Electrochem Soc | / 6卷 / 2337-2343期

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[41] THE FORMATION OF SILICON-CARBIDE FILMS FROM DISILANE DERIVATIVES
HENGGE, E
ZECHMANN, A
HOFER, F
POLT, P
LUX, B
DANZINGER, M
HAUBNER, R
ADVANCED MATERIALS, 1994, 6 (7-8) : 584 - 587
[42] SELECTIVE SILICON EPITAXIAL-GROWTH BY LPCVD USING SILANE
PARKER, GJ
STARBUCK, CMK
ELECTRONICS LETTERS, 1990, 26 (13) : 831 - 832
[43] DOPING OF EPITAXIAL SILICON FILMS
SHEPHERD, WH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 541 - &
[44] EPITAXIAL SILICON THIN FILMS
LI, CH
SCARINGELLA, D
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (08) : C176 - C176
[45] EPITAXIAL SILICON THIN FILMS
MILLER, KJ
MANZ, RC
GRIECO, MJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) : 643 - 645
[46] Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane
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Ferguson, BA
Banerjee, S
Mullins, CB
APPLIED PHYSICS LETTERS, 1996, 69 (08) : 1110 - 1112
[47] Growth of epitaxial β-SiC films on silicon using solid graphite and silicon sources
Woo, HK
Lee, CS
Bello, I
Lee, ST
DIAMOND AND RELATED MATERIALS, 1999, 8 (8-9) : 1737 - 1740
[48] Growth of epitaxial β-SiC films on silicon using solid graphite and silicon sources
Woo, H.K.
Lee, C.S.
Bello, I.
Lee, S.T.
Diamond and Related Materials, 1999, 8 (08): : 1737 - 1740
[49] ROLE OF HYDROGEN DESORPTION IN THE CHEMICAL-VAPOR DEPOSITION OF SI(100) EPITAXIAL-FILMS USING DISILANE
BOLAND, JJ
PHYSICAL REVIEW B, 1991, 44 (03): : 1383 - 1386
[50] EPITAXIAL SILICON FILMS USING SYSTEM DICHLOROSILANE-HYDROGEN
DRUMINSKI, M
WIECZOREK, C
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C82 - C82

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