Quality of selective silicon epitaxial films deposited using disilane and chlorine

被引：0
|
作者：
Dept. of Elec. and Comp. Engineering, Raleigh, NC 27695, United States [1 ]
不详 [2 ]
机构：
来源：
J Electrochem Soc | / 6卷 / 2337-2343期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
30
引用
收藏
相关论文
共 50 条
  • [1] Quality of selective silicon epitaxial films deposited using disilane and chlorine
    O'Neil, PA
    Öztürk, MC
    Batchelor, AD
    Xu, MM
    Maher, DM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (06) : 2337 - 2343
  • [2] Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine
    O'Neil, PA
    Öztürk, MC
    Batchelor, AD
    Xu, MM
    Maher, DM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (06) : 2344 - 2352
  • [3] Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine
    Dept. of Elec. and Comp. Engineering, Raleigh, NC 27695, United States
    不详
    J Electrochem Soc, 6 (2344-2352):
  • [4] Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine
    ONeil, PA
    Ozturk, MC
    Violette, KE
    Batchelor, D
    Christensen, K
    Maher, DM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) : 3309 - 3315
  • [5] STRUCTURE OF RECRYSTALLIZED SILICON FILMS PREPARED FROM AMORPHOUS-SILICON DEPOSITED USING DISILANE
    HASEGAWA, S
    SAKAMOTO, S
    INOKUMA, T
    KURATA, Y
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1218 - 1220
  • [6] Residual stress in silicon films deposited by LPCVD from disilane
    Temple-Boyer, P
    Scheid, E
    Faugere, G
    Rousset, B
    THIN SOLID FILMS, 1997, 310 (1-2) : 234 - 237
  • [7] Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine
    Pejnefors, J
    Zhang, SL
    Grahn, JV
    Östling, M
    Persson, L
    Hult, M
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 1970 - 1973
  • [8] Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine
    Pejnefors, J.
    Zhang, S.-L.
    Grahn, J.V.
    Ostling, M.
    Persson, L.
    Hult, M.
    Journal of Applied Physics, 86 (04):
  • [9] LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE
    KAMINS, TI
    CASS, TR
    DELLOCA, CJ
    LEE, KF
    PEASE, RFW
    GIBBONS, JF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1151 - 1154
  • [10] Effects of oxygen on selective silicon deposition using disilane
    O'Neil, PA
    Öztürk, MC
    Batchelor, AD
    Maher, DM
    MATERIALS LETTERS, 1999, 38 (06) : 418 - 422
12345