Plasma immersion ion implantation model including multiple charge state

被引:0
|
作者
机构
来源
J Appl Phys | / 7卷 / 3432期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Progress in direct-current plasma immersion ion implantation and recent applications of plasma immersion ion implantation and deposition
    Chu, Paul K.
    SURFACE & COATINGS TECHNOLOGY, 2013, 229 : 2 - 11
  • [22] Flexible system for multiple plasma immersion ion implantation-deposition processes
    Tian, XB
    Fu, RKY
    Chu, PK
    Anders, A
    Gong, CZ
    Yang, SQ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (12): : 5137 - 5140
  • [23] Semiconductor processing by plasma immersion ion implantation
    Ensinger, W
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 258 - 268
  • [24] Plasma immersion ion implantation for silicon processing
    Yankov, RA
    Mändl, S
    ANNALEN DER PHYSIK, 2001, 10 (04) : 279 - 298
  • [25] Plasma immersion ion implantation with dielectric substrates
    Linder, BP
    Cheung, NW
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 1996, 24 (06) : 1383 - 1388
  • [26] Modification of metals by plasma immersion ion implantation
    Maendl, Stephan
    Manova, Darina
    SURFACE & COATINGS TECHNOLOGY, 2019, 365 : 83 - 93
  • [27] Sheath dynamics in plasma immersion ion implantation
    Brutscher, J
    Gunzel, R
    Moller, W
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 1996, 5 (01): : 54 - 60
  • [28] Plasma immersion ion implantation for silicon processing
    Yankov, Rossen A.
    Mändl, Stephan
    Annalen der Physik (Leipzig), 2001, 10 (04): : 279 - 298
  • [29] Semiconductor applications of plasma immersion ion implantation
    Chu, PK
    PLASMA PHYSICS AND CONTROLLED FUSION, 2003, 45 (05) : 555 - 570
  • [30] Plasma immersion ion implantation for semiconductor processing
    Cheung, NW
    MATERIALS CHEMISTRY AND PHYSICS, 1996, 46 (2-3) : 132 - 139