DEFECT DENSITIES IN INTEGRATED CIRCUITS.

被引：0
|
作者：
Meehan, M.J.
机构：
来源：
RCA Engineer | 1979年 / 24卷 / 06期
关键词：
DEFECT DENSITY;
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学科分类号：
摘要：
Defect density is an expression commonly used to describe the density of defective sites on an integrated circuit as a result of wafer processing. This paper presents a mathematical model which sets some guidelines to help maximize integrated-circuit yields. The model assumes the defects are random; the calculated yield predictions are close approximations of actual results.
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页码：21 / 25
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