首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
IONIZED Mg DOPING IN MOLECULAR-BEAM EPITAXY OF GaAs.
被引:0
|
作者
:
Mannoh, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Mannoh, M.
[
1
]
Nomura, Y.
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Nomura, Y.
[
1
]
Shinozaki, K.
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Shinozaki, K.
[
1
]
Mihara, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Mihara, M.
[
1
]
Ishii, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
Ishii, M.
[
1
]
机构
:
[1]
Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
来源
:
|
1600年
/ 59期
关键词
:
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
相关论文
共 50 条
[21]
Photoluminescence study of Al doping in GaAs grown by molecular-beam epitaxy
Qurashi, US
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
Qurashi, US
Iqbal, MZ
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
Iqbal, MZ
Andersson, TG
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
Andersson, TG
JOURNAL OF APPLIED PHYSICS,
1996,
80
(10)
: 5932
-
5940
[22]
BERYLLIUM DELTA-DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill
SCHUBERT, EF
KUO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill
KUO, JM
KOPF, RF
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill
KOPF, RF
LUFTMAN, HS
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill
LUFTMAN, HS
HOPKINS, LC
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill
HOPKINS, LC
SAUER, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT and T Bell Laboratories, Murray Hill
SAUER, NJ
JOURNAL OF APPLIED PHYSICS,
1990,
67
(04)
: 1969
-
1979
[23]
DOPING OF ZNTE BY MOLECULAR-BEAM EPITAXY
TAO, IW
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Columbia University, New York
TAO, IW
JURKOVIC, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Columbia University, New York
JURKOVIC, M
WANG, WI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Columbia University, New York
WANG, WI
APPLIED PHYSICS LETTERS,
1994,
64
(14)
: 1848
-
1849
[24]
INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
REINHART, FK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
REINHART, FK
JOURNAL OF APPLIED PHYSICS,
1974,
45
(04)
: 1812
-
1817
[25]
TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
WOOD, CEC
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
JOURNAL OF APPLIED PHYSICS,
1978,
49
(09)
: 4854
-
4861
[26]
BE DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
JOURNAL OF ELECTRONIC MATERIALS,
1976,
5
(04)
: 445
-
445
[27]
EFFECTS OF INDIUM DOPING ON CRYSTALLINE QUALITIES OF GAAS ON SI BY MOLECULAR-BEAM EPITAXY
OHBU, I
论文数:
0
引用数:
0
h-index:
0
OHBU, I
ISHINO, M
论文数:
0
引用数:
0
h-index:
0
ISHINO, M
MOZUME, T
论文数:
0
引用数:
0
h-index:
0
MOZUME, T
APPLIED PHYSICS LETTERS,
1989,
54
(04)
: 396
-
397
[28]
SNTE-DOPING OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
KUBALL, M
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
KUBALL, M
CARDONA, M
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
CARDONA, M
MAZUELAS, A
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
MAZUELAS, A
PLOOG, KH
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
PLOOG, KH
PEREZCAMACHO, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
PEREZCAMACHO, JJ
SILVEIRA, JP
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
SILVEIRA, JP
BRIONES, F
论文数:
0
引用数:
0
h-index:
0
机构:
PAUL DRUDE INST FESTKORPERELEKTRON, D-10117 BERLIN, GERMANY
BRIONES, F
JOURNAL OF APPLIED PHYSICS,
1995,
77
(09)
: 4339
-
4342
[29]
CARBON DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS FROM A HEATED GRAPHITE FILAMENT
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
MALIK, RJ
NOTTENBERG, RN
论文数:
0
引用数:
0
h-index:
0
NOTTENBERG, RN
SCHUBERT, EF
论文数:
0
引用数:
0
h-index:
0
SCHUBERT, EF
WALKER, JF
论文数:
0
引用数:
0
h-index:
0
WALKER, JF
RYAN, RW
论文数:
0
引用数:
0
h-index:
0
RYAN, RW
APPLIED PHYSICS LETTERS,
1988,
53
(26)
: 2661
-
2663
[30]
SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY
SASA, S
论文数:
0
引用数:
0
h-index:
0
SASA, S
MUTO, S
论文数:
0
引用数:
0
h-index:
0
MUTO, S
KONDO, K
论文数:
0
引用数:
0
h-index:
0
KONDO, K
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
HIYAMIZU, S
论文数:
0
引用数:
0
h-index:
0
HIYAMIZU, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985,
24
(08):
: L602
-
L604
←
1
2
3
4
5
→