Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-enhanced chemical vapor deposition

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机构：
[1] Brassard, D.
[2] El Khakani, M.A.
来源：
El Khakani, M.A. (elkhakan@inrs-emt.uquebec.ca) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Current voltage characteristics - Electric breakdown - Electric conductivity - Heating - Hydrogenation - Permittivity - Plasma enhanced chemical vapor deposition - Silicon carbide;
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摘要：
Dielectric properties of amorphous hydrogenated silicon carbide thin films were discussed. These films were grown by plasma-enhanced chemical vapor deposition (PECVD) technique. Results showed a dielectric constant as high as 14 together with a relatively high breakdown field of about 3 MV/cm.
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