Direct nonlinear FET parameter extraction using large-signal waveform measurements

被引：9

作者：

Werthof, A. ^{[1
]}

van Raay, F. ^{[1
]}

Kompa, G. ^{[1
]}

机构：

[1] Univ of Kassel, Kassel, Germany

来源：

IEEE Microwave and Guided Wave Letters | 1993年 / 3卷 / 05期

关键词：

Capacitors - High electron mobility transistors - MESFET devices;

D O I：

10.1109/75.217205

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

A new method is presented which permits a direct nonlinear FET parameter extraction of the drain current generator and the gate source capacitor from large-signal waveform measurements. For demonstration, the high frequency characteristics of the nonlinear drain current generator for a GaAs-MESFET and a MODFET are extracted. Significant differences between the dc and RF characteristics are observed and interpreted.

引用

页码：130 / 132

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