QUASISTEADY MELTING REGIME UNDER THE INFLUENCE OF COMBINED ACTION OF LASER RADIATIONS ON SEMICONDUCTOR MATERIALS.

被引：0
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作者：
Abakumov, V.N. [1 ]
Guman, V.N. [1 ]
Yuferev, V.S. [1 ]
机构：
[1] Acad of Sciences of the USSR, A. F., Ioffe Physicotechnical Inst,, Leningrad, USSR, Acad of Sciences of the USSR, A. F. Ioffe Physicotechnical Inst, Leningrad, USSR
来源：
Soviet physics. Semiconductors | 1984年 / 18卷 / 10期
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页码：1144 / 1146
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