X-ray characterization of indium phosphide substrates

被引：0
|
作者：
Moore, C.D. [1 ,2 ]
Tanner, B.K. [1 ]
机构：
[1] Department of Physics, University of Durham, South Road, Durham DH1 3LE, United Kingdom
[2] Dept. of Mat. Sci. and Engineering, University of California Los Angeles, 6532 Boelter Hall, Los Angeles, CA 90095-1595, United States
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 66卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
Crystal growth from melt - Crystal lattices - Dislocations (crystals) - Semiconductor doping - Semiconductor growth - Substrates - Sulfur - X ray crystallography;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The perfection of vertical gradient freeze (VGF) and liquid encapsulated Czochralski (LEC) grown 〈001〉 sulphur-doped InP crystals has been studied by high resolution X-ray diffraction and synchrotron X-ray topography. Of those examined, all VGF crystals except one were dislocation-free, the exception having a uniform dislocation density of about 200 cm-2 resulting from slip. The double axis diffraction maps and double crystal topographs showed most crystals to have a uniform lattice curvature. The largest radii of curvature were from VGF wafers, while the smallest values were for LEC wafers.
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页码：11 / 14
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