Reaction modeling of chemically amplified resists for ArF excimer laser lithography

被引：0
|
作者：
Ohfuji, T. [1 ]
Nakano, K. [1 ]
Maeda, K. [1 ]
Hasegawa, E. [1 ]
机构：
[1] NEC Corp, Kanagawa, Japan
来源：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 1995年 / 13卷 / 06期
关键词：
Chemical reactions - Computer simulation - Dissolution - Excimer lasers - Fourier transform infrared spectroscopy - Photolithography - Salts - Terpolymers;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Quantitative analyses of the main reaction process in ArF chemically amplified resist, which is the deprotection reaction during baking and the dissolution reaction, are reported and discussed. A simulation model of the deprotection reaction is also described. The deprotection reaction is calculated from Fourier transform infrared difference spectrum before and after the postexposure bake. The dissolution rate is measured via a fabricated monitor that exposes the developing wafer with 670nm light from a semiconductor laser, collects the reflected light, and accumulates the measured wave form into a personal computer.
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页码：3022 / 3025
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