INFRARED SPECTRA OF AMORPHOUS SiNx:H FILMS.

Infrared absorption spectra of two series of a-SiN//x:H samples prepared by glow discharge in the gas mixtures of SiH//4 plus N//2 plus H//2, and SiCl//4 plus N//2 plus H//2 have been measured. The Si-N bond vibration absorption at 840 cm** minus **1 has been observed for both of the two series of samples, but H-N bond absorption appears at 3000, 1390 cm** minus **1 only for films prepared from SiCl//4. The nitrogen content has been determined by IR spectroscopy as a function of substrate temperature, gas flow rate, and annealing temperatures. Two possible configurations of N atoms in the films could be deduced from the measurements.