Damage distribution and annealing behaviour of high-energy 115In+ implanted into Si(100)

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[1] Zhang, Bo-Xu
[2] Wang, Zhong-Lie
[3] Schreutelkamp, R.J.
[4] Saris, F.W.
[5] Du, An-Yan
[6] Li, Qi
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Zhang, Bo-Xu | 1600年 / 48期
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Semiconducting Silicon;
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