Hot-hole electrooptic effect

被引：0
|
作者：
Vorb'ev, L.E.
Donetski, D.V.
Firsov, D.A.
机构：
来源：
JETP Letters (Translation of JETP Pis'ma v Redaktsiyu) | 1994年 / 59卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] A MONTE-CARLO SIMULATION OF MODE-LOCKED HOT-HOLE LASER OPERATION
    STRIJBOS, RC
    LOK, JGS
    WENCKEBACH, WT
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (36) : 7461 - 7468
  • [42] High-responsivity sub-bandgap hot-hole plasmonic Schottky detectors
    Alavirad, Mohammad
    Olivieri, Anthony
    Roy, Langis
    Berini, Pierre
    OPTICS EXPRESS, 2016, 24 (20): : 22544 - 22554
  • [43] Hot-Hole Cooling Controls the Initial Ultrafast Relaxation in Methylammonium Lead Iodide Perovskite
    Hedley, Gordon J.
    Quarti, Claudio
    Harwell, Jonathon
    Prezhdo, Oleg V.
    Beljonne, David
    Samuel, Ifor D. W.
    SCIENTIFIC REPORTS, 2018, 8
  • [44] Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis
    Oldani, Luca
    Rossetti, Mattia
    Alagi, Filippo
    Atzeni, Laura
    Borella, Fabio
    Brazzelli, Silvia
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2022, 22 (02) : 258 - 266
  • [45] HOT-HOLE CYCLOTRON-RESONANCE IN GERMANIUM IN CONSTANT FIELDS EPERPENDICULAR-TOH
    GAVRILENKO, VI
    DODIN, EP
    KRASILNIK, ZF
    NOZDRIN, YN
    CHERNOBROVTSEVA, MD
    JETP LETTERS, 1982, 35 (10) : 535 - 538
  • [46] Hot-Hole Cooling Controls the Initial Ultrafast Relaxation in Methylammonium Lead Iodide Perovskite
    Gordon J. Hedley
    Claudio Quarti
    Jonathon Harwell
    Oleg V. Prezhdo
    David Beljonne
    Ifor D. W. Samuel
    Scientific Reports, 8
  • [47] Increased Deep-Level Hole Trapping by Combined Negative-Bias Temperature and Channel Hot-Hole Stress
    Ho, T. J. J.
    Ang, D. S.
    Leong, K. C.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1337 - 1339
  • [48] Hot-hole transport and noise phenomena in silicon at cryogenic temperatures from first principles
    Catherall, David S.
    Minnich, Austin J.
    PHYSICAL REVIEW B, 2023, 108 (23)
  • [49] Plasmon-induced hot-hole generation and extraction at nano-heterointerfaces for photocatalysis
    Monika Ahlawat
    Diksha Mittal
    Vishal Govind Rao
    Communications Materials, 2
  • [50] An Improved Hot-Carrier Lifetime Evaluation Method for the n-Type LDMOS With Hot-Hole Injection
    Zhang, Chunwei
    Li, Yang
    Li, Zhiming
    Fu, Xiaoqian
    Chen, Zhenxiang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) : 3567 - 3571
12345