Electronically induced instability of a hydrogen-carbon complex in silicon and its dissociation mechanism

被引:0
|
作者
Kamiura, Yoichi [1 ]
Hayashi, Masao [1 ]
Nishiyama, Yoshihide [1 ]
Ohyama, Shigeki [1 ]
Yamashita, Yoshifumi [1 ]
机构
[1] Okayama Univ, Okayama, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6579 / 6590
相关论文
共 50 条
  • [1] Electronically induced instability of a hydrogen-carbon complex in silicon and its dissociation mechanism
    Kamiura, Y
    Hayashi, M
    Nishiyama, Y
    Ohyama, S
    Yamashita, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6579 - 6591
  • [2] Isotope effects on the dissociation of a hydrogen-carbon complex in silicon
    Kamiura, Yoichi
    Fukuda, Kazuhisa
    Ohyama, Shigeki
    Yamashita, Yoshifumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (3 A): : 1098 - 1099
  • [3] Isotope effects on the dissociation of a hydrogen-carbon complex in silicon
    Kamiura, Y
    Fukuda, K
    Ohyama, S
    Yamashita, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1098 - 1099
  • [4] Structure and charge-state-dependent instability of a hydrogen-carbon complex in silicon
    Kamiura, Y.
    Ishiga, N.
    Ohyama, S.
    Yamashita, Y.
    Materials Science Forum, 1997, 258-263 (pt 1): : 247 - 252
  • [5] Structure and charge-state-dependent instability of a hydrogen-carbon complex in silicon
    Kamiura, Y
    Ishiga, N
    Ohyama, S
    Yamashita, Y
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 247 - 252
  • [6] Structure and stress-induced alignment of a hydrogen-carbon complex in silicon
    Okayama Univ, Okayama, Japan
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (11 A):
  • [7] Structure and stress-induced alignment of a hydrogen-carbon complex in silicon
    Kamiura, Y
    Ishiga, N
    Yamashita, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A): : L1419 - L1421
  • [8] Stress-induced level shift of a hydrogen-carbon complex in silicon
    Fukuda, K
    Kamiura, Y
    Yamashita, Y
    Ishiyama, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 6700 - 6704
  • [9] ELECTRONIC-PROPERTIES OF THE HYDROGEN-CARBON COMPLEX IN CRYSTALLINE SILICON
    ENDROS, AL
    KRUHLER, W
    KOCH, F
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) : 2264 - 2271
  • [10] Effects of charge state on stress-induced alignment and relaxation of a hydrogen-carbon complex in silicon
    Fukuda, K
    Kamiura, Y
    Yamashita, Y
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 184 - 187