STEM study of P and Ge segregation to grain boundaries in Si1-xGex thin films

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作者：
Qin, W. [1 ]
Ast, D.G. [1 ]
Kamins, T.I. [1 ]
机构：
[1] Inst of Microelectronics, Singapore
来源：
Materials Research Society Symposium - Proceedings | 1999年 / 557卷
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页码：201 / 206
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