TWO REACTION MODEL OF INTERFACE TRAP ANNEALING.

被引：0
|
作者：
Reed, Michael L. [1 ]
Plummer, James D. [1 ]
机构：
[1] Stanford Univ, CA, USA, Stanford Univ, CA, USA
来源：
IEEE Transactions on Nuclear Science | 1986年 / NS-33卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
19
引用
收藏
相关论文
共 50 条
  • [41] Mechanisms and models of interface trap annealing in positively-biased MOS devices
    Song, Yu
    Qiu, Chen
    Zhou, Hang
    Liu, Yang
    Chen, Xiang
    Wei, Su-Huai
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (02)
  • [42] TEMPERATURE BEHAVIOUR OF THE CRYSTALLINE LATTICE OF ORIENTED POLYTETRAFLUOROETHYLENE DURING ANNEALING.
    Shirina, N.G.
    Zubov, Yu.A.
    Kostromina, S.V.
    Polymer science USSR, 1986, 28 (06): : 1454 - 1460
  • [43] Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recovery
    罗勇
    黄大鸣
    刘文军
    李名复
    半导体学报, 2009, 30 (07) : 68 - 73
  • [44] Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model
    Lee, J. H.
    Wu, W. H.
    Islam, A. E.
    Alam, M. A.
    Oates, A. S.
    2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 745 - +
  • [45] RECOVERY MECHANISM OF IRRADIATED MATERIALS DURING STATE II OF ANNEALING.
    Arbuzov, V.L.
    Klotsman, S.M.
    Podchinenov, I.Ye.
    1600, (52):
  • [46] TRANSPORT PROPERTIES OF SILICIDES: EFFECTS OF ION-IRRADIATION AND ANNEALING.
    Suni, I.
    Gronberg, L.
    Saarilahti, J.
    Vide, les Couches Minces, 1987, 42 (236): : 233 - 236
  • [47] On the Modification of Structural, Morphological, and Electronic Properties of InP (110) by Annealing.
    Dumas, M.
    Benkacem, M.
    Palau, J.M.
    Lassabatere, L.
    Le Vide, les couches minces, 1988, 43 (241): : 241 - 244
  • [48] DETERMINATION OF THRESHOLD POWER FOR SEMICONDUCTOR MELTING DURING LASER ANNEALING.
    Edelman, Piotr
    Kontkiewicz, Andrzej M.
    Electron Technology (Warsaw), 1985, 17 (3-4): : 25 - 33
  • [49] LARGE-AREA FIELD EMISSION DIODE FOR SEMICONDUCTOR ANNEALING.
    Luches, A.
    Nassisi, V.
    Perrone, A.
    Perrone, M.R.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1980, 104 (1-2): : 228 - 232
  • [50] GROWTH KINETICS OF PALLADIUM SILICIDES FORMED BY RAPID THERMAL ANNEALING.
    Wei, C.S.
    Van der Spiegel, J.
    Santiago, J.J.
    Journal of the Electrochemical Society, 1988, 135 (02): : 446 - 451
12345