Application of low temperature scanning electron microscopy for the investigation of single-electron tunneling circuits

被引:0
|
作者
机构
来源
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Single-electron tunneling with slow insulators
    Fedorov, S. A.
    Chtchelkatchev, N. M.
    Udalov, O. G.
    Beloborodov, I. S.
    PHYSICAL REVIEW B, 2015, 92 (11)
  • [32] Single-electron tunneling in InP nanowires
    De Franceschi, S
    van Dam, JA
    Bakkers, EPAM
    Feiner, LF
    Gurevich, L
    Kouwenhoven, LP
    APPLIED PHYSICS LETTERS, 2003, 83 (02) : 344 - 346
  • [33] Broadband single-electron tunneling transistor
    Visscher, EH
    Lindeman, J
    Verbrugh, SM
    Hadley, P
    Mooij, JE
    vanderVleuten, W
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 2014 - 2016
  • [34] Continuum limit of single-electron tunneling
    Stopa, M
    SUPERLATTICES AND MICROSTRUCTURES, 2000, 27 (5-6) : 617 - 620
  • [35] Strong tunneling in the single-electron transistor
    Joyez, P
    Bouchiat, V
    Esteve, D
    Urbina, C
    Devoret, MH
    PHYSICAL REVIEW LETTERS, 1997, 79 (07) : 1349 - 1352
  • [36] Single-electron tunneling in magnetic systems
    Brataas, A
    Nazarov, YV
    Inoue, J
    Bauer, GEW
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 198-99 : 176 - 178
  • [37] SUBHARMONIC STRUCTURES OF SINGLE-ELECTRON TUNNELING
    HU, CD
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (05) : 1651 - 1657
  • [38] Single-electron tunneling in silicon nanostructures
    Tilke, A
    Pescini, L
    Blick, RH
    Lorenz, H
    Kotthaus, JP
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (04): : 357 - 365
  • [39] Single-electron tunneling in silicon nanostructures
    A. Tilke
    L. Pescini
    R.H. Blick
    H. Lorenz
    J.P. Kotthaus
    Applied Physics A, 2000, 71 : 357 - 365
  • [40] Strong tunneling in the single-electron box
    Konig, J
    Schoeller, H
    PHYSICAL REVIEW LETTERS, 1998, 81 (16) : 3511 - 3514