Accurate on-resistance model for low voltage VDMOS devices

被引：0
|
作者：
Seoul Natl Univ, Seoul, Korea, Republic of [1 ]
机构：
来源：
Solid State Electron | / 2卷 / 345-350期
关键词：
Number:; 90-0100-10; Acronym:; KOSEF; Sponsor: Korea Science and Engineering Foundation; -;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] A New SCR Structure With High Holding Voltage and Low ON-Resistance for 5-V Applications
    Do, Kyoung-Il
    Koo, Yong-Seo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 1052 - 1058
  • [42] ANALYSIS OF THE QUASI-SATURATION REGION OF HIGH-VOLTAGE VDMOS DEVICES
    REBOLLO, J
    FIGUERAS, E
    MILLAN, J
    LORATAMAYO, E
    SERRAMESTRES, F
    SOLID-STATE ELECTRONICS, 1987, 30 (02) : 177 - 180
  • [43] An LDMOS with large SOA and low specific on-resistance
    杜文芳
    吕信江
    陈星弼
    Journal of Semiconductors, 2016, 37 (05) : 56 - 59
  • [44] ULTRA-LOW ON-RESISTANCE RMOSFET.
    Ueda, Daisuke
    Shimano, Akio
    Nagasaki, Hiroki
    Takagi, Hiromitsu
    Kitamura, Kazuyoshi
    Kawasaki, Hideo
    Yokozawa, Masami
    1600, (32):
  • [45] Video multiplexer demultiplexer offers low on-resistance
    Schweber, B
    EDN, 1996, 41 (02) : 34 - 34
  • [46] An LDMOS with large SOA and low specific on-resistance
    Du Wenfang
    Lyu Xinjiang
    Chen Xingbi
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (05)
  • [47] An LDMOS with large SOA and low specific on-resistance
    杜文芳
    吕信江
    陈星弼
    Journal of Semiconductors, 2016, (05) : 56 - 59
  • [48] Efficient power MOSFETs offer low on-resistance
    Schweber, B
    EDN, 1996, 41 (01) : 18 - 18
  • [49] A novel model of the high-voltage VDMOS for the circuit simulation
    Liu, Siyang
    Zhu, Rongxia
    Jia, Kan
    Huang, Dong
    Sun, Weifeng
    Zhang, Chunwei
    SOLID-STATE ELECTRONICS, 2014, 93 : 21 - 26
  • [50] Low on-resistance trench power MOSFETs design
    Chien, F. -T.
    Liao, C. -N.
    Wang, C. -L.
    Chiu, H. -C.
    Tsai, Y. -T.
    ELECTRONICS LETTERS, 2008, 44 (03) : 232 - 233
12345