ENHANCED DEPTH OF AMORPHIZATION OF SEMICONDUCTORS BY MOLECULAR IMPLANTATION.

被引：0

作者：

Hansen, D.A. ^{[1
]}

Poker, D.B. ^{[1
]}

Appleton, B.R. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN,, USA, Oak Ridge Natl Lab, Oak Ridge, TN, USA

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B16卷 / 4-5期

关键词：

PHYSICS; -; Atomic;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Comparison of molecular implantation of SiF//3 and As//2 and their atomic constituents into semiconductors indicated that the molecular species amorphized to a depth 1. 2 to 2. 5 times greater than the atomic species. This effect resulted from selective molecular breakup due to collisions with residual gas atoms in the accelerator vacuum system, indicating the need for improved vacuum conditions in commercial ion implanters used for molecular implantation.

引用

页码：373 / 375

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