Picosecond optical bistability of ZnS-ZnTe/GaAs multiple quantum wells on reflection at room temperature

被引：0

作者：

Changchun Inst of Physics, Changchun, China ^{[1
]}

机构：

来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 2 B卷 / 1279-1281期

关键词：

Feedback - Laser pulses - Metallorganic chemical vapor deposition - Neodymium lasers - Nonlinear optics - Optical bistability - Refractive index - Semiconducting gallium arsenide - Semiconducting zinc compounds - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The optical bistability with picosecond switching time in ZnS-ZnTe/GaAs multiple quantum wells (MQWs) on reflection at room temperature has been studied for the first time. The research results indicate that the switching threshold from high to low state and contrast ratio for the optical bistability are about 1.2 MW/cm2 and 3:1, respectively. The major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the band filling effect.

引用

共 50 条

[21] Femtosecond reflection of bulk GaAs and GaAs/AlGaAs multiple quantum wells
Li, W
Peng, W
Qiu, Z
Yu, Z
ULTRAFAST PROCESSES IN SPECTROSCOPY, 1996, : 269 - 274
[22] THERMALLY-INDUCED ABSORPTIVE OPTICAL BISTABILITY IN GAAS/(AL,GA)AS MULTIPLE-QUANTUM WELLS
ZIMMERMANN, U
BURAK, D
SCHLAAD, KH
KLINGSHIRN, C
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1399 - 1407
[23] MEASUREMENTS OF ROOM-TEMPERATURE BAND-GAP-RESONANT OPTICAL NONLINEARITIES OF GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND BULK GAAS
PARK, SH
MORHANGE, JF
JEFFERY, AD
MORGAN, RA
CHAVEZPIRSON, A
GIBBS, HM
KOCH, SW
PEYGHAMBARIAN, N
DERSTINE, M
GOSSARD, AC
ENGLISH, JH
WEIGMANN, W
APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1201 - 1203
[24] NONLINEAR OPTICS WITH ROOM-TEMPERATURE EXCITONS IN GAAS ALGAAS MULTIPLE QUANTUM WELLS
CHEMLA, DS
MILLER, DAB
SMITH, PW
GOSSARD, AC
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1983, 73 (12) : 1863 - 1863
[25] EFFECT OF TEMPERATURE-VARIATIONS ON OPTICAL WAVEGUIDING IN GAAS MULTIPLE QUANTUM WELLS
SONEK, GJ
CHEN, YJ
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (07) : 1130 - 1135
[26] ROOM-TEMPERATURE EXCITONIC SATURATION IN CDZNTE/ZNTE QUANTUM-WELLS
LEE, D
ZUCKER, JE
JOHNSON, AM
FELDMAN, RD
AUSTIN, RF
APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1132 - 1134
[27] Room temperature infrared intersubband photoluminescence in GaAs quantum wells
Sauvage, S
Moussa, Z
Boucaud, P
Julien, FH
Berger, V
Nagle, J
APPLIED PHYSICS LETTERS, 1997, 70 (11) : 1345 - 1347
[28] Room temperature carrier recombination in InGaAs/GaAs quantum wells
1600, (74):
[29] Optical modulation in ZnSe-ZnS Multiple Quantum Wells
Liu, DL
Li, GY
Fan, JQ
Lin, JL
Fan, XW
INTEGRATED OPTOELECTRONICS II, 1998, 3551 : 92 - 94
[30] Picosecond nonlinear optical response of a GaAs/AlGaAs asymmetric triple quantum well structure at room temperature
Ahn, HS
Yi, SN
Ryu, JY
Kim, SW
Mizutani, K
Yamaguchi, M
Sawaki, N
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (03) : 451 - 453

← 1 2 3 4 5 →