Picosecond optical bistability of ZnS-ZnTe/GaAs multiple quantum wells on reflection at room temperature

The optical bistability with picosecond switching time in ZnS-ZnTe/GaAs multiple quantum wells (MQWs) on reflection at room temperature has been studied for the first time. The research results indicate that the switching threshold from high to low state and contrast ratio for the optical bistability are about 1.2 MW/cm2 and 3:1, respectively. The major nonlinear mechanism for the optical bistability is due to the change of refractive index caused by the band filling effect.