Initial stages of the formation of a fullerene film on a silicon substrate

被引:0
|
作者
机构
来源
Phys Solid State | / 10卷 / 1722期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Thin film silicon substrate formation using electrochemical anodic etching method
    Kwon, J. -H.
    Lee, S. -H.
    Ju, B. -K.
    SURFACE ENGINEERING, 2009, 25 (08) : 603 - 605
  • [32] EFFECT OF TREATMENT OF THE SUBSTRATE SURFACE ON THE INITIAL-STAGES OF FORMATION OF GALLIUM-ARSENIDE FILMS
    BOLKHOVITYANOV, YB
    RUDAYA, NS
    YUDAEV, VI
    INORGANIC MATERIALS, 1993, 29 (01) : 21 - 25
  • [33] Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
    Tumarkin, A. V.
    Serenkov, I. T.
    Sakharov, V. I.
    Razumov, S. V.
    Odinets, A. A.
    Zlygostov, M. V.
    Sapego, E. N.
    Afrosimov, V. V.
    PHYSICS OF THE SOLID STATE, 2017, 59 (12) : 2374 - 2380
  • [34] Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
    A. V. Tumarkin
    I. T. Serenkov
    V. I. Sakharov
    S. V. Razumov
    A. A. Odinets
    M. V. Zlygostov
    E. N. Sapego
    V. V. Afrosimov
    Physics of the Solid State, 2017, 59 : 2374 - 2380
  • [35] Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation
    Pelleg, J.
    Rosenberg, S.
    Sinder, M.
    ACTA MATERIALIA, 2011, 59 (11) : 4283 - 4290
  • [36] Initial stages of bismuth oxide formation
    Lyamkin S.A.
    Russian Metallurgy (Metally), 2010, 2010 (02) : 105 - 107
  • [37] Initial Stages in the Formation of Nickel Phosphides
    Garcia-Muelas, Rodrigo
    Li, Qiang
    Lopez, Nuria
    JOURNAL OF PHYSICAL CHEMISTRY B, 2018, 122 (02): : 672 - 678
  • [38] Initial stages of the GaN growth on oxidized silicon
    V. N. Bessolov
    Yu. V. Zhilyaev
    E. V. Konenkova
    S. A. Kukushkin
    A. V. Luk’yanov
    S. D. Raevskii
    V. A. Fedirko
    Technical Physics Letters, 2001, 27 : 1010 - 1012
  • [39] ON THE INITIAL-STAGES OF SILICON INTERACTION WITH IRIDIUM
    AGEEV, VN
    AFANASYEVA, EY
    SOLOVYEV, SM
    GRIGORYEV, AK
    FIZIKA TVERDOGO TELA, 1993, 35 (02): : 486 - 491
  • [40] Initial stages of the GaN growth on oxidized silicon
    Bessolov, VN
    Zhilyaev, YV
    Konenkova, EV
    Kukushkin, SA
    Luk'yanov, AV
    Raevskii, SD
    Fedirko, VA
    TECHNICAL PHYSICS LETTERS, 2001, 27 (12) : 1010 - 1012