REM studies of Ge growth on Au-adsorbed Si(001) surfaces

被引：0
|
作者：
Minoda, H. [1 ]
Tanishiro, Y. [1 ]
Yamamoto, N. [1 ]
Yagi, K. [1 ]
机构：
[1] Tokyo Inst of Technology, Tokyo, Japan
来源：
Surface Science | 1995年 / 331-333卷 / pt B期
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摘要：
Semiconductor growth
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页码：913 / 919
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