REM studies of Ge growth on Au-adsorbed Si(001) surfaces

被引：0

作者：

Minoda, H. ^{[1
]}

Tanishiro, Y. ^{[1
]}

Yamamoto, N. ^{[1
]}

Yagi, K. ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Tokyo, Japan

来源：

Surface Science | 1995年 / 331-333卷 / pt B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconductor growth

引用

页码：913 / 919

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