MONOLITHIC SILICON PHOTODETECTOR/AMPLIFIER IC FOR FIBER AND INTEGRATED OPTICS APPLICATION.

被引：0

作者：

Hartman, Davis H. ^{[1
]}

Grace, Martin K. ^{[1
]}

Ryan, Carl R. ^{[1
]}

机构：

[1] Motorola Government Electronics, Group, Scottsdale, AZ, USA, Motorola Government Electronics Group, Scottsdale, AZ, USA

来源：

Journal of Lightwave Technology | 1985年 / LT-3卷 / 04期

关键词：

DIGITAL COMMUNICATION SYSTEMS - FIBER OPTICS - LIGHT - Amplifiers - OPTICAL COMMUNICATION - SEMICONDUCTOR DIODES; PHOTODIODE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The primary design considerations, fabrication techniques, and measured performance bounds on a monolithic silicon photodetector/amplifier integrated circuit are presented. The IC was designed for utilization in short-to-medium-haul fiber-optic data links, performing signal processing and isolation functions at data rates up to 500 Mb/s. Consisting of a p-i-n photodiode integrated monolithically with a multistage amplifier/limiter circuit, the device was fabricated with the planar high-frequency bipolar transistors commonly used for emitter coupled logic circuits. Circuit features include dc coupling, wideband operation, and capability of driving 50 OMEGA at the output to 0. 5 V (peak-peak).

引用

页码：729 / 738

共 43 条

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