Light and current degradation of a-Si:H pin, nin and pip diodes detected with CPM

被引：1
|
作者：
Ostendorf, H.C. [1 ]
Kusian, W. [1 ]
Kruhler, W. [1 ]
Schwarz, R. [1 ]
机构：
[1] Siemens AG, Munchen, Germany
来源：
Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期
关键词：
Current degradation - Hole injection - Light degradation - nin diodes - pin diodes - pip diodes - Recombination - Space charge limited current - Subbandgap absorption;
D O I：
10.1016/0022-3093(93)91084-G
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：659 / 662
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