Structural characterization of 3C-SiC epitaxially grown on Si-on-insulator

被引:0
|
作者
Aristotle Univ of Thessaloniki, Thessaloniki, Greece [1 ]
机构
来源
Mater Sci Forum | / pt 1卷 / 445-448期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Structural and optical characterization of porous 3C-SiC
    Monguchi, T
    Fujioka, H
    Ono, K
    Oshima, M
    Serikawa, T
    Hayashi, T
    Horiuchi, K
    Yamashita, S
    Yoshii, K
    Baba, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (07) : 2241 - 2243
  • [32] Polarity control of CVD grown 3C-SiC on Si(111)
    Pezoldt, Joerg
    Schroeter, Bernd
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 91 - +
  • [33] 3C-SiC monocrystals grown on undulant Si(001) substrates
    Nagasawa, H
    Yagi, K
    Kawhara, T
    Hatta, N
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 47 - 58
  • [34] Search for midgap levels in 3C-SiC grown on Si substrates
    Yamada, N
    Kato, M
    Ichimura, M
    Arai, E
    Tokuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (10A): : L1094 - L1095
  • [35] Stress control in 3C-SiC films grown on Si(111)
    Zgheib, C
    Masri, P
    Weih, P
    Ambacher, O
    Pezoldt, J
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 301 - 304
  • [36] Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wall CVD
    PEZZOTTI Giuseppe
    材料热处理学报, 2004, (05) : 803 - 806
  • [37] Micro-raman spectroscopy for stress evaluation of 3C-SiC epitaxially grown on Si substrate by hot wall CVD
    Zhu, WL
    Zhu, JF
    Pezzotti, G
    14TH CONGRESS OF INTERNATIONAL FEDERATION FOR HEAT TREATMENT AND SURFACE ENGINEERING, VOLS 1 AND 2, PROCEEDINGS, 2004, : 803 - 806
  • [38] Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism
    Soueidan, M.
    Ferro, G.
    Stoemenos, J.
    Polychroniadis, E. K.
    Chaussende, D.
    Soares, F.
    Juillaguet, S.
    Camassel, J.
    Monteil, Y.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 287 - 290
  • [39] Growth and characterization of 3C-SiC/SiNx/Si structure
    Kim, Kwang Chul
    Park, Chan Il
    Nahm, Kee Suk
    Suh, Eun-Kyung
    Materials Science Forum, 2000, 338
  • [40] The growth and characterization of 3C-SiC/SiNx/Si structure
    Kim, KC
    Park, CI
    Nahm, KS
    Suh, EK
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 317 - 320